cystech electronics corp. spec. no. : c203a3 issued date : 2007.10.16 revised date :2012.03.12 page no. : 1/7 BTC4401A3 cystek product specification general purpose npn epitaxial planar transistor BTC4401A3 description ? the BTC4401A3 is designed for using in driver st age of af amplifier and general purpose switching application. ? high current , i c = 0.6a ? low v ce(sat) , v ce(sat) = 0.2v(typ.) at i c /i b = 500ma/50ma optimal for low voltage operation ? complementary to bta4403a3 . ? pb-free package symbol outline absolute maximum ratings (ta=25 c) parameter BTC4401A3 to-92 e c b b base c collector e emitter symbol limits unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6 v collector current i c 0.6 a power dissipation pd 625 mw junction temperature tj 150 c storage temperature tstg -55~+150 c
cystech electronics corp. spec. no. : c203a3 issued date : 2007.10.16 revised date :2012.03.12 page no. : 2/7 BTC4401A3 cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 75 - - v i c =100 a bv ceo 50 - - v i c =1ma bv ebo 6 - - v i e =10 a i cbo - - 10 na v cb =60v i cex - - 100 na v ce =60v, v be =-0.4v i ebo - - 50 na v eb =5v *v ce(sat) 1 - - 0.3 v i c =150ma, i b =15ma *v ce(sat) 2 - 0.2 0.45 v i c =500ma, i b =50ma *v be(sat) 1 - - 0.95 v i c =150ma, i b =15ma *v be(sat) 2 - - 1.2 v i c =500ma, i b =50ma *v be(on) - - 1 v v ce =1v, i c =20ma *h fe 1 100 - - - v ce =2v, i c =0.1ma *h fe 2 120 - 240 - v ce =2v, i c =1ma *h fe 3 120 - 240 - v ce =2v, i c =50ma *h fe 4 40 - - - v ce =2v, i c =500ma f t - 230 - mhz v ce =5v, i c =20ma, f=100mhz cob - 9.3 - pf v cb =5v, f=1mhz *pulse test: pulse width 380 s, duty cycle 2% classification of h fe 2 rank a b1 b2 c range 120~175 165~195 185~225 215~240 ordering information device package shipping BTC4401A3, bulk to-92 (pb-free lead plating package) 1000 pcs/ bag, 10 bags/box, 10boxes/carton BTC4401A3, t/b to-92 (pb-free lead plating package) 2000 pcs / tape & box
cystech electronics corp. spec. no. : c203a3 issued date : 2007.10.16 revised date :2012.03.12 page no. : 3/7 BTC4401A3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.05 0.1 0.15 0.2 0.25 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 200u a 300u a 400u a 500ua 1ma ib=100ua emitter grounded output characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 1ma 1.5m a 2ma 2.5ma 5ma ib=500ua current gain vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) current gain---hfe ta=25c ta=75c ta=125c vce=1v current gain vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) current gain---hfe ta=25c ta=75c ta=125c vce=2v current gain vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) current gain---hfe ta=25c ta=75c ta=125c vce=10v saturation voltage vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) 125c 75c 25c vcesat=10ib
cystech electronics corp. spec. no. : c203a3 issued date : 2007.10.16 revised date :2012.03.12 page no. : 4/7 BTC4401A3 cystek product specification typical characteristics(cont.) saturation voltage vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) 125c 75c 25c vcesat=20ib saturation voltage vs collector current 100 1000 10000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=10ib ta=25c ta=75c 125c on voltage vs collector current 100 1000 10000 1 10 100 1000 collector current---ic(ma) on voltage---(mv) vbeon@vce=10v 125c 25c 75c capacitance vs reverse-biased voltage 1 10 100 0.1 1 10 100 reverse-biased voltage---vr(v) capacitance---(pf) cib cob transition frequency vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) transition frequency---ft(mhz) vce=5v power derating curve 0 100 200 300 400 500 600 700 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(mw)
cystech electronics corp. spec. no. : c203a3 issued date : 2007.10.16 revised date :2012.03.12 page no. : 5/7 BTC4401A3 cystek product specification to-92 taping outline millimeters dim item min. max. a component body height 4.33 4.83 d tape feed diameter 3.80 4.20 d1 h2a h2a h2 h2 d2 a h w w1 h3 h4 h1 l1 l p2 p p1 f1 f2 d1 d t2 t t1 lead diameter 0.36 0.53 d2 component body diameter 4.33 4.83 f1,f2 component lead pitch 2.40 2.90 f1,f2 f1-f2 - 0.3 h height of seating plane 15.50 16.50 h1 feed hole location 8.50 9.50 h2 front to rear deflection - 1 h2a deflection left or right - 1 h3 component height - 27 h4 feed hole to bottom of component - 21 l lead length after component removal - 11 l1 lead wire enclosure 2.50 - p feed hole pitch 12.50 12.90 p1 center of seating plane location 5.95 6.75 p2 4 feed hole pitch 50.30 51.30 t over all tape thickness - 0.55 t1 total taped package thickness - 1.42 t2 carrier tape thickness 0.36 0.68 w tape width 17.50 19.00 w1 adhesive tape width 5.00 7.00 - 20 pcs pitch 253 255
cystech electronics corp. spec. no. : c203a3 issued date : 2007.10.16 revised date :2012.03.12 page no. : 6/7 BTC4401A3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c203a3 issued date : 2007.10.16 revised date :2012.03.12 page no. : 7/7 BTC4401A3 cystek product specification to-92 dimension *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1704 0.1902 4.33 4.83 g 0.0142 0.0220 0.36 0.56 b 0.1704 0.1902 4.33 4.83 h - * 0.1000 - * 2.54 c 0.5000 - 12.70 - i - * 0.0500 - * 1.27 d 0.0142 0.0220 0.36 0.56 1 - * 5 - * 5 e - * 0.0500 - * 1.27 2 - * 2 - * 2 f 0.1323 0.1480 3.36 3.76 3 - * 2 - * 2 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . c4401 marking: 3 1 a d b c i 1 e f 2 3 g h 2 s t yle: pin 1. emitter 2.collec t or 3.bas e 3-l ead t o -9 2 plastic pa ckag e cys t ek pa ck a g e code: a 3 date code
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